13716-12-6

  • Product NameTri-tert-butylphosphine
  • Molecular FormulaC12H27P
  • Molecular Weight202.32
  • Purity99%
  • AppearanceColorless to light yellow liquid
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Product Details

Quick Details

  • CasNo: 13716-12-6
  • Molecular Formula: C12H27P
  • Appearance: Colorless to light yellow liquid
  • Purity: 99%

Tri-tert-butylphosphine,TTBP 13716-12-6 In Stock, Immediately Delivery

  • Molecular Formula:C12H27P
  • Molecular Weight:202.32
  • Appearance/Colour:Colorless to light yellow liquid 
  • Vapor Pressure:0.105mmHg at 25°C 
  • Melting Point:30-35 °C(lit.) 
  • Boiling Point:229.4 °C at 760 mmHg 
  • Flash Point:94.6 °C 
  • PSA:13.59000 
  • Density:0.861 g/mL at 25 °C 
  • LogP:4.86380 

Tri-tert-butylphosphine(Cas 13716-12-6) Usage

Reaction

Useful as a ligand in a variety of palladium-catalyzed C-N, C-O and C-C bond-forming reactions under mild conditions.

Chemical Properties

Colorless to light yellow liqui

Uses

Tri‐tert‐butylphosphine (P t Bu3) is used as a ligand in transition metal catalysis, from common palladium‐promoted cross coupling reactions 1 to less usual copper‐catalysed [3 + 2] cycloaddition of cyclic ketones to olefins or alkynes.

InChI:InChI=1/C12H27P/c1-10(2,3)13(11(4,5)6)12(7,8)9/h1-9H3

13716-12-6 Relevant articles

Reactivity of [Pt(PtBu3)2] with Zinc(I/II) Compounds: Bimetallic Adducts, Zn-Zn Bond Cleavage, and Cooperative Reactivity

Hidalgo, Nereida,Romero-Pérez, Carlos,Maya, Celia,Fernández, Israel,Campos, Jesús

, p. 1113 - 1119 (2021)

Metal-only Lewis pairs (MOLPs) based on ...

A method of synthesis tri-tert-butylphosphine

Chen Hui, Li Yunfei, Zhao Shunwei, Yang Zhenqiang, Sun Minqing, Zhou Duo, Cui Fumin, Yang Ruina, Duan Zheng

, CN109553639A

The invention discloses a kind of methods for synthesizing tri-tert-butylphosphine, belong to organic synthesis field.In anhydrous and oxygen-free atmosphere, using tert-bromo butane as raw material, under the catalytic action of Raney nickel, is reacted with calcium phosphide and generate tri-tert-butylphosphine.Reaction condition of the present invention is mild compared with prior art, easy to operate, and yield is high, and raw material is simple and easy to get, reduces production cost, is suitble to industrialized production.

Plasma enhanced atomic layer deposition of crystallized gallium phosphide on Si with tri-Ethylgallium and tri-tert-Butylphosphine

SeongUk Yun , Cheng-Hsuan Kuo , Ping-Che Lee , Scott T. Ueda , Victor Wang , Harshil Kashyap , Aaron J. Mcleod , Zichen Zhang , Charles H. Winter , Andrew C. Kummel

Applied Surface Science Volume 619, 15 May 2023, 156727

However, a GaP ALD process has not yet been reported using TEGa and safer tri-tert-butylphosphine (tri-TBP) since the tri-TBP needs a high temperature to be reactive on Si (1 0 0), …

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